Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...
Reducing power loss by 80% compared to general-purpose devices, the BISS family of SMT bipolar transistors has a saturation voltage below 60 mV at 1 A. The devices can serve in applications from ...
Targeting the high power demands of high-end and professional audio applications, the MJL4281A (npn) and MJL4302A (pnp) audio bipolar transistors offer a sustained collector-to-emitter voltage of 350 ...
Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) represent a critical advancement in semiconductor technology, integrating a silicon base with germanium to markedly enhance frequency ...
PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series.
A new family of automotive-rated NPN and PNP bipolar transistors bring low losses and high reliability to switching, regulation/conversion, and driving applications. Typical applications include ...
The U.S. power transistor market was valued at USD 3.10 billion in 2025 and is projected to reach USD 6.43 billion by 2035, expanding at a CAGR of 9.55%. Growth is fueled by rising EV adoption driving ...
To extend its BiCOM biCMOS process into the next generation, Texas Instruments is tapping the benefits of complementary silicon-germanium (SiGe) bipolar transistors. TI has developed a third ...
The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications.
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