TL;DR: SK hynix is advancing its next-generation 1c DRAM using over five EUV layers, enhancing 16Gb DDR5 DRAM production with planned investments starting late 2024. The company is also preparing for ...
TL;DR: Samsung's 1c DRAM yield for next-gen HBM4 memory has improved from 0% to around 40%, enabling planned mass production later this year. Design restructuring and process optimizations enhanced ...
SK Hynix has reportedly finished converting its key DRAM production facility in Wuxi, China, to the fourth-generation 1a process. The company reached the manufacturing milestone despite US export ...
To address the ongoing memory crisis, ASUS is reportedly planning to enter the DRAM manufacturing market by the second quarter of 2026. By establishing its own production lines, the tech giant aims to ...
Samsung Electronics and SK hynix are taking sharply different approaches in their bid to lead the 10-nanometer-class sixth-generation DRAM segment (1c, 11–12 nanometer-class), the latest battleground ...
Samsung Electronics is reportedly preparing to convert portions of its NAND flash production lines in Pyeongtaek and Hwaseong into DRAM facilities as the company races to meet surging demand for ...
AI workloads are pushing the boundaries of compute, memory, and interconnect architectures, and to meet these goals, manufacturers are rapidly accelerating advanced logic and DRAM development. Chief ...
Nov 5, 2008 – Munich Qimonda AG (NYSE:QI), a leading global memory supplier, today announced the commencement of commercial production of DRAM chips using its new Buried Wordline technology. Qimonda’s ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results