NEW YORK & TOKYO & DÜSSELDORF--(BUSINESS WIRE)--Crystal IS, an Asahi Kasei company, today announced the successful serial production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates ...

A new technical paper titled “3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD” was published by researchers at Arizona State University. “This letter reports the first demonstration ...

Researchers at US-based Technology and Devices International (TDI) have created a gallium nitride (GaN) bulk substrate, which they say will improve the performance and lifetimes of GaN-based device ...

All contemporary integrated nanophotonic platforms have one important feature in common: they consist of a device layer—an optically thin film—supported by a substrate of a different material. The ...