Gallium-nitride (GaN) wide-bandgap (WBG) semiconductor devices enable higher power density and efficiency than do silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) or insulated-gate ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, the future of next generation power systems, today introduced three SuperGaN® FETs ...
TOKYO, Oct. 13, 2025 ― Renesas Electronics Corporation (TSE:6723), a supplier of semiconductor solutions, announced that it is supporting efficient power - Read more from Inside HPC & AI News.
Thanks to its use of GaN technology, the Ugreen Nexode Pro 100W 3-Port GaN Fast Charger is 45 percent smaller than the Apple 96W USB-C Power Adapter–the U.S. model of the Nexode Pro measures 2.8 by ...
The need for high power in the VHF, UHF, and microwave bands has led to transistors that can easily supply tens to hundreds of watts at RF frequencies to 10 GHz and beyond. Most of these devices are ...
Three New Devices Bring SuperGaN’s Normally-Off D-Mode Platform Advantages to SMD-Based High Power Systems Requiring Higher Reliability and Performance with Lower Thermals in a Compact Footprint ...
Three New Devices Bring SuperGaN's Normally-Off D-Mode Platform Advantages to SMD-Based High Power Systems Requiring Higher Reliability and Performance with Lower Thermals in a Compact Footprint ...
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