Abstract: The overstress of the negative gate-source voltage of SiC MOSFET, even in a short period of time, could cause the threshold voltage drift of the device, resulting in increased on-state ...
Abstract: The electromagnetic-inverse-scattering (EMIS) problem is solved by a novel two-step deep-learning (DL) approach in this article. The newly proposed two-step DL approach not only predicts the ...
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